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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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Acknowledgements

This work was partly supported by National Science and Technology Major Project (Grant No. 2017ZX02315001-004), National Natural Science Foundation of China (Grant Nos. 61851401, 61421005, 61822401, 61604006), and the 111 Project (Grant No. B18001).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China

    Yang Zhao, Qianqian Huang & Ru Huang

  2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing, 100871, China

    Qianqian Huang & Ru Huang

Authors
  1. Yang Zhao
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  2. Qianqian Huang
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  3. Ru Huang
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Correspondence to Qianqian Huang or Ru Huang.

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Zhao, Y., Huang, Q. & Huang, R. A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability. Sci. China Inf. Sci. 63, 129402 (2020). https://doi.org/10.1007/s11432-019-9874-9

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  • DOI: https://doi.org/10.1007/s11432-019-9874-9

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