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Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

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Abstract

The Internet of Things has created an increasing demand for giant magnetoresistive (GMR) sensor owing to its high sensitivity, low power-consumption and small size. A full Wheatstone bridge GMR sensor is fabricated on 6-inch wafers with an annealing process on patterned devices. It can be observed that GMR resistors could have different pinning directions in one wafer by magnetic resistance measurements and MATLAB simulations. The full Wheatstone bridge device shows a sensitivity of 2 mV/V/mT in a linear range of ±6 mT, and its angular response to the surrounding magnetic field is as low as 0.08 mT. These results demonstrate a new approach to high-sensitive and low-cost GMR sensors with a controllable post annealing process.

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References

  1. Baibich M N, Broto J M, Fert A, et al. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Phys Rev Lett, 1988, 61: 2472–2475

    Article  Google Scholar 

  2. Binasch G, Grünberg P, Saurenbach F, et al. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys Rev B, 1989, 39: 4828–4830

    Article  Google Scholar 

  3. Trinh X T, Jeng J T, Lu C C, et al. Miniature tri-axis magnetometer with in-plane GMR sensors. IEEE Trans Magn, 2017, 53: 1–4

    Article  Google Scholar 

  4. Bernieri A, Ferrigno L, Laracca M, et al. Eddy current testing probe based on double-coil excitation and GMR sensor. IEEE Trans Instrum Meas, 2019, 68: 1533–1542

    Article  Google Scholar 

  5. Ye C, Huang Y, Udpa L, et al. Differential sensor measurement with rotating current excitation for evaluating multilayer structures. IEEE Sens J, 2016, 16: 782–789

    Article  Google Scholar 

  6. Ravi N, Rizzi G, Chang S E, et al. Quantification of cDNA on GMR biosensor array towards point-of-care gene expression analysis. Biosens Bioelectron, 2019, 130: 338–343

    Article  Google Scholar 

  7. Freitas P P, Ferreira R, Cardoso S. Spintronic sensors. Proc IEEE, 2016, 104: 1894–1918

    Article  Google Scholar 

  8. Guedes A, Macedo R, Jaramillo G, et al. Hybrid GMR sensor detecting 950 pT/sqrt(Hz) at 1 Hz and room temperature. Sensors, 2018, 18: 790

    Article  Google Scholar 

  9. Zhu C, Zhang L, Geng J W, et al. A micro-array bio detection system based on a GMR sensor with 50-ppm sensitivity. Sci China Inf Sci, 2017, 60: 082403

    Article  Google Scholar 

  10. Wang L, Hu Z, Zhu Y, et al. Electric field-tunable giant magnetoresistance (GMR) sensor with enhanced linear range. ACS Appl Mater Interfaces, 2020, 12: 8855–8861

    Article  Google Scholar 

  11. Ouyang Y, Wang Z, Zhao G, et al. Current sensors based on GMR effect for smart grid applications. Sens Actuat A-Phys, 2019, 294: 8–16

    Article  Google Scholar 

  12. Swastika P E, Antarnusa G, Suharyadi E, et al. Biomolecule detection using Wheatstone bridge giant magnetoresistance (GMR) sensors based on CoFeB spin-valve thin film. J Phys-Conf Ser, 2018, 1011: 012060

    Article  Google Scholar 

  13. Giebeler C, Adelerhof D J, Kuiper A E T, et al. Robust GMR sensors for angle detection and rotation speed sensing. Sens Actuat A-Phys, 2001, 91: 16–20

    Article  Google Scholar 

  14. Li L, Mak K Y, Leung C W, et al. Detection of 10-nm superparamagnetic iron oxide nanoparticles using exchange-biased GMR sensors in Wheatstone bridge. IEEE Trans Magn, 2013, 49: 4056–4059

    Article  Google Scholar 

  15. Lu C C, Liu Y T, Jhao F Y, et al. Responsivity and noise of a wire-bonded CMOS micro-fluxgate sensor. Sens Actuat A-Phys, 2012, 179: 39–43

    Article  Google Scholar 

  16. Jeng J T, Trinh X T, Hung C H, et al. Quasi-static current measurement with field-modulated spin-valve GMR sensors. Sensors, 2019, 19: 1882

    Article  Google Scholar 

  17. Berthold I, Müller M, Ebert R, et al. Selective realignment of the exchange biased magnetization direction in spintronic layer stacks using continuous and pulsed laser radiation. In: Proceedings of SPIE, 2014, 8967: 89671F

    Google Scholar 

  18. Yan S, Cao Z, Guo Z, et al. Design and fabrication of full Wheatstone-bridge-based angular GMR sensors. Sensors, 2018, 18: 1832

    Article  Google Scholar 

  19. Reig C, Cubells-Beltrán M D, Muñoz D R. Magnetic field sensors based on giant magnetoresistance (GMR) technology: applications in electrical current sensing. Sensors, 2009, 9: 7919–7942

    Article  Google Scholar 

  20. Vedyayev A, Dieny B, Ryzhanova N, et al. Angular dependence of giant magnetoresistance in magnetic multilayered structures. Europhys Lett, 1994, 25: 465–470

    Article  Google Scholar 

  21. Peng X, Wakeham S, Morrone A, et al. Towards the sub-50nm magnetic device definition: ion beam etching (IBE) vs plasma-based etching. Vacuum, 2009, 83: 1007–1013

    Article  Google Scholar 

  22. Labrune M, Kools J C S, Thiaville A. Magnetization rotation in spin-valve multilayers. J Magn Magn Mater, 1997, 171: 1–15

    Article  Google Scholar 

  23. Qian Z, Bai R, Yang C, et al. Effective anisotropy field in the free layer of patterned spin-valve resistors. J Appl Phys, 2011, 109: 103904

    Article  Google Scholar 

Download references

Acknowledgements

The work was financially supported by National Natural Science Foundation of China (Grant No. 61627813), International Collaboration Project B16001, and VR Innovation Platform from Qingdao Science and Technology Commission.

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Authors and Affiliations

  1. Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao, 266104, China

    Zhiqiang Cao, Yiming Wei, Shaohua Yan, Lin Lin, Zhi Li, Qunwen Leng & Weisheng Zhao

  2. Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing, 100191, China

    Zhiqiang Cao, Yiming Wei, Wenjing Chen, Shaohua Yan, Zhi Li, Lezhi Wang, Huaiwen Yang, Qunwen Leng & Weisheng Zhao

  3. Goertek Inc., Weifang, 261031, China

    Qunwen Leng

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  1. Zhiqiang Cao
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  2. Yiming Wei
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  3. Wenjing Chen
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  4. Shaohua Yan
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  5. Lin Lin
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  6. Zhi Li
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  7. Lezhi Wang
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  8. Huaiwen Yang
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  9. Qunwen Leng
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  10. Weisheng Zhao
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Correspondence to Huaiwen Yang, Qunwen Leng or Weisheng Zhao.

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Cao, Z., Wei, Y., Chen, W. et al. Tuning the pinning direction of giant magnetoresistive sensor by post annealing process. Sci. China Inf. Sci. 64, 162402 (2021). https://doi.org/10.1007/s11432-020-2959-6

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  • DOI: https://doi.org/10.1007/s11432-020-2959-6

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