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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications

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Conclusion

We develop a unified hybrid compact model of a different structure β-Ga2O3 SBDs for full-wave rectifier and mixer applications. The model results are compared with experimental data, and a good match was attained. Its SPICE-compatibility for circuit simulation is demonstrated in the rectifier and mixer. Considering the universality of this model, it can be practical to characterize β-Ga2O3 SBDs with other structures and further evaluate their performance in various circuits.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61925110, 62004184, 62004186, 51961145110), MOST of China (Grant No. 2018YFB0406504), Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSWJSC048), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002).

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Authors and Affiliations

  1. School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China

    Kai Zhou, Guangzhong Jian, Guangwei Xu, Feihong Wu, Yao Li, Xiaolong Zhao & Shibing Long

  2. School of Electronic and Information Engineering, Beihang University, Beijing, 100191, China

    Qiming He

  3. The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Zhuangzhuang Hu & Qian Feng

Authors
  1. Kai Zhou
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  2. Qiming He
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  3. Guangzhong Jian
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  4. Guangwei Xu
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  5. Feihong Wu
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  6. Yao Li
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  7. Zhuangzhuang Hu
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  8. Qian Feng
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  9. Xiaolong Zhao
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  10. Shibing Long
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Corresponding authors

Correspondence to Guangwei Xu or Shibing Long.

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Zhou, K., He, Q., Jian, G. et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci. China Inf. Sci. 64, 219403 (2021). https://doi.org/10.1007/s11432-021-3224-2

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  • DOI: https://doi.org/10.1007/s11432-021-3224-2

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