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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces

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Abstract

Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.

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Acknowledgements

This work was supported by National Key RD Program of China (Grant No. 2017YFE0131300), National Natural Science Foundation of China (Grant Nos. U1732268, 61874128, 61851406, 11905282), Frontier Science Key Program of CAS (Grant Nos. QYZDY-SSW-JSC032, ZDBS-LY-JSC009), Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), Shanghai Youth Top Talent Program, Shanghai Sailing Program (Grant Nos. 19YF1456200, 19YF1456400), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Tingting Jin, Tiangui You, Xiaolei Zhang, Hao Liang, Yifan Zhu, Jialiang Sun, Hangning Shi, Chaodan Chi, Min Zhou & Xin Ou

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Tingting Jin, Xiaolei Zhang, Hao Liang, Yifan Zhu, Jialiang Sun, Hangning Shi & Chaodan Chi

  3. College of Information Science and Engineering, Jiaxing University, Jiaxing, 314001, China

    Jiajie Lin

  4. School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China

    Xiaolei Zhang

  5. Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wroclaw, 50-370, Poland

    Robert Kudrawiec

  6. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden

    Shumin Wang

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  1. Tingting Jin
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  2. Jiajie Lin
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  3. Tiangui You
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  9. Chaodan Chi
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  10. Min Zhou
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  12. Shumin Wang
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  13. Xin Ou
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Corresponding authors

Correspondence to Jiajie Lin, Shumin Wang or Xin Ou.

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Jin T T and Lin J J have the same contribution to this work.

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Jin, T., Lin, J., You, T. et al. Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces. Sci. China Inf. Sci. 65, 182402 (2022). https://doi.org/10.1007/s11432-021-3398-y

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  • DOI: https://doi.org/10.1007/s11432-021-3398-y

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