Conclusion
In this study, HZO FeFETs with polarization switching affecting μeff were experimentally realized. It is demonstrated that the μeff at Qinv of 5 × 1012 cm−2 are 178 cm2·V−1·s−1 and 148 cm2·V−1·s−1 after W/E (−7.8 V/+ 4.5 V, 1 µs) pulses, respectively, both written and erased μeff are lower than that for the initial state. The degradation of the μeff is responsible for the increased scattering effect caused by positive charge trapping and detrapping during polarization switching, and the former’s effect is greater.
This is a preview of subscription content, log in via an institution to check access.
References
Yang X Q, Xu Y N, Bi J S, et al. Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci China Inf Sci, 2022, 65: 169403
Ravichandran V, Li C, Banagozar A, et al. Artificial neural networks based on memristive devices. Sci China Inf Sci, 2018, 61: 060423
Dünkel S, Trentzsch M, Richter R, et al. A FeFET based super-low-power ultra-fast embedded NVM technology for 22 nm FDSOI and beyond. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2017
AliT, Kuühnel K, Czernohorsky M, et al. Impact of ferroelectric wakeup on reliability of laminate based Si-doped hafnium oxide (HSO) FeFET memory cells. In: Proceedings of IEEE International Reliability Physics Symposium (IRPS), Dallas, 2020
Higashi Y, Kaczer B, Verhulst A S, et al. Investigation of imprint in FE-HfO2 and its recovery. IEEE Trans Electron Devices, 2020, 67: 4911–4917
Bersuker G, Barnett J, Moumen N, et al. Interfacial layer-induced mobility degradation in high-k transistors. Jpn J Appl Phys, 2004, 43: 7899–7902
Yurchuk E, Muller J, Muller S, et al. Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories. IEEE Trans Electron Devices, 2016, 63: 3501–3507
Yu X, Kang J, Zhang R, et al. Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-CutTM GeOI substrates. Solid-State Electron, 2016, 115: 120–125
Acknowledgements
This work was supported by National Key Research and Development Project (Grant No. 2018YFB2200500) and National Natural Science Foundation of China (Grant No. 62025402, 62090033, 91964202, 92064003, 61874081, 62004149), and Key Research Project of Zhejiang Lab (Grant No. 2021MD0AC01).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Liu, F., Peng, Y., Xiao, W. et al. Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. Sci. China Inf. Sci. 66, 169402 (2023). https://doi.org/10.1007/s11432-022-3491-6
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-022-3491-6