Elsevier

Microelectronics Reliability

Volume 42, Issues 9–11, September–November 2002, Pages 1719-1722
Microelectronics Reliability

Scanning Thermal Microscopy in Microsystem Reliability Analysis

https://doi.org/10.1016/S0026-2714(02)00219-6Get rights and content

First page preview

First page preview
Click to open first page preview

References (0)

Cited by (10)

  • A SThM probe optimization and its time-space multi-scale modeling

    2016, Mechatronics
    Citation Excerpt :

    In order to enhance the spatial resolution, a new design of thermoresistive probes has been proposed by Gotszalk and his coworkers in [11–13] which include a piezoresistive sensor for the tip displacement control. Recently, Janus and his colleagues have proposed a novel design [14–16] expecting quantitative temperature measurement in the range of 1K with a resolution of few tenths of nanometers. A first contribution of this paper is the design optimization of thermoresistive probes which is one of the key factors for high measurement precision.

  • Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform

    2012, Microelectronics Reliability
    Citation Excerpt :

    We believe that these techniques may be effective tool for detection of defects in the structure of the Al interconnect caused by degradation. Results of our previous experiments with application of the SThM technique for Al lines characterization may be found in [13]. That paper focused on the difference between results obtained for active and passive modes of SThM operation.

  • Modelling, simulation and optimization for a SThm nanoprobe

    2014, 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014
View all citing articles on Scopus
View full text