Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations

doi:10.1016/j.mejo.2005.02.031

Microelectronics Journal

Volume 36, Issues 3–6, March–June 2005, Pages 404-406

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Abstract

We present the electronic structure calculation of two closely n-type δ-doped quantum wells within the lines of the Thomas–Fermi (TF) theory. The distance between the impurity planes as well as the impurity density of the δ-doped planes is varied. The exchange effects are also analyzed in the present study. We have found a degeneration distance for the ground state of 360 and 400 Å with and without exchange effects, respectively (n_2D=3.0×10¹² cm⁻²). We also calculate the mobility ratio of double δ-doped (DDD) GaAs quantum wells respect to a single δ-doped (SDD), finding the optimum distance between wells for the maximum mobility. Our results are in a good agreement with respect to the optical and transport measurements available.

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Acknowledgements

The authors acknowledge support from the Mexican National Council for Science and Technology (CONACyT) through grant 48070613-E.

References (13)

I. Rodriguez-Vargas et al.
Surf. Sci.
(2003)
G. Tempel
Surf. Sci.
(1990)
M. Zachau et al.
Solid State Commun.
(1986)
L.M. Gaggero-Sager
Modell. Simul. Mater. Sci. Eng.
(2001)
E. Ozturk et al.
J. Phys. D
(2003)
X. Zheng et al.
Appl. Phys. Lett.
(1993)

There are more references available in the full text version of this article.

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Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations

Abstract

Section snippets

Acknowledgements

Surf. Sci.

Surf. Sci.

Solid State Commun.

Modell. Simul. Mater. Sci. Eng.

J. Phys. D

Appl. Phys. Lett.