Elsevier

Microelectronics Journal

Volume 36, Issues 3–6, March–June 2005, Pages 407-410
Microelectronics Journal

Optical phonon modes confinement in quasiperiodic semiconductor superlattice

https://doi.org/10.1016/j.mejo.2005.02.032Get rights and content

Abstract

The dispersion relation and localization profile of confined optical phonon modes propagating in quasiperiodic Fibonacci nitride semiconductor structures are analyzed through a transfer-matrix approach. This substitutional sequence is described in terms of a series of generations that obey peculiar recursion relations and/or inflation rules. We present a quantitative analysis of the localization and magnitude of the allowed band widths in the optical phonon spectra, as well as how they scale as a function of the number of generations of the Fibonacci sequence.

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Acknowledgements

We would like to thank the Brazilian Agencies FAPERN, MCT-CTInfra, CNPq-NanoSemiMat and CAPES-Procad for partial financial support.

References (12)

  • E.L. Albuquerque et al.

    Phys. Rep.

    (2003)
  • S. Nakamura et al.

    Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

    (2000)
  • B.C. Lee et al.

    Phys. Rev. B

    (1998)
  • R. Loudon

    Adv. Phys.

    (1964)
  • M.A. Stroscio et al.

    Phonons in Nanostructures

    (2001)
  • S.M. Komirenko et al.

    Phys. Rev. B

    (2000)
There are more references available in the full text version of this article.

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