Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure
Section snippets
Acknowledgements
This research was partially supported by the Millennium Scientic Iniciative/Chile (Condensed Matter Physics, grant P02-054-F), Fondo Nacional de Ciencias/Chile (grants 1020839 and 7020839), Univ. Técnica Federico Santa María (internal grant), Colombian COLCIENCIAS (grants 1106-05-13828 and 1115-05-11502), CODI-Univ. de Antioquia Agencies, and Brazilian Agencies CNPq, FAPESP, Rede Nacional de Materiais Naoestruturados/CNPq, and Millenium Institute for Quantum Computing/MCT.
References (12)
- et al.
Appl. Phys. Lett.
(1997)et al.Phys. Rev. B
(1998) - et al.
Phys. Rev. B
(1995)et al.J. Phys.: Condens. Matter
(1999) - et al.
J. Phys.: Condens. Matter
(2002)et al.J. Appl. Phys.
(2002) - et al.
Fundamentals of Semiconductors
(1998) - et al.
Phys. Rev. B
(1996)et al.Phys. Rev. B
(1997) - et al.
J. Appl. Phys.
(1996)
There are more references available in the full text version of this article.
Cited by (0)
Copyright © 2005 Elsevier Ltd. All rights reserved.