A 33 mW 12.5 Gbps BiCMOS transmitter for high speed backplane applications
Introduction
Fig. 1 shows a model of a data transfer system with a transmitter, a receiver and a lossy transmission channel. When a high speed signal is traveling through a long channel, the signal will degrade due to the channel's bandwidth limitations. The channel's frequency response can be modeled as a low pass transfer function as shown in Fig. 1 [1], [2], [3].
When the data rate is higher than the bandwidth of the channel, signal attenuation causes the binary data not to transition completely within a symbol interval. As a result, the binary data will spread into the adjacent symbols, which is known as intersymbol interference or ISI [4], [5], [6], [7]. To reduce the effect of ISI, the signal is often given extra amplitude during transition which amounts to a high frequency boost in the frequency domain [8]. This process is called pre-emphasis or signal equalization which has a frequency characteristic also shown in Fig. 1. The transmitter acts as a pre-equalizer that boosts the high frequency component of the signal which gets attenuated through the channel. The amplitude and duration of the boost are set to offset the signal loss in the channel. The longer the channel is, the higher the boost needs to be. Generally, the duration of the boost is set less than or equal to one data interval.
To achieve signal equalization, CML based topologies are commonly used. Fig. 2a shows a typical CML driver without signal conditioning, and Fig. 2b shows a CML driver when signal equalization is used. The equalization is done in the output stage of the driver. The swing depends on the data pattern. For example, if the data is changing, like pattern 010, the amplitude swing is maximum as in Eq. (1). However, when the data is steady, like pattern 111, the amplitude swing is minimum. While CML topologies are common, they are not power efficient. As in Eqs. (1), (2), the output stage consumes a current that is proportional to four times the load current which does not include the pre-driver current.
The work presented in this paper will offer a novel way to achieve signal equalization in the transmitter at significantly lower power consumption than commonly used CML based topologies [9], [10], [11], [12]. Section 2 will explain the new topology details along with some simulations results. Section 3 will present silicon measurements in addition to comparisons with other published work. Section 4 presents a conclusion which summarizes the new topology performance.
Section snippets
Pre-emphasis transmitter topology
Fig. 3 shows a schematic of the new voltage mode transmitter with differential output voltage and pre-emphasis. The circuit consists of a linear equalizer and an output stage. The output stage can achieve good line impedance matching while keeping the power consumption very low using a positive feedback technique [13]. Pre-emphasis capability is achieved in the linear equalizer by introducing a high frequency boost. This capability enables the transmitter to transmit high speed signals through
Measurement results
The transmitter was fabricated in a 130 nm BiCMOS technology with a maximum ft of 100 GHz. The transmitter circuit used a 2.5 V supply. It was characterized at 12.5 Gbps using a lossy 14 in. FR4 stripline that is 4 mil in width which is common in backplanes. A 12.5 Gbps PRBS7 data pattern was generated using an Agilent 70843C pattern generator. An Agilent 86100C digital communication analyzer was used to measure the signal at the end of the lossy channel.
Fig. 11, Fig. 12 show the differential
Conclusion
A low power 12.5 Gbps voltage mode transmitter with pre-emphasis capability was presented. Power was reduced by using a linear equalizer and a low power output stage. Pre-emphasis was achieved by using a boost capacitor and a resistor in the linear equalizer. The transmitter reliably transmitted signals through a 14 in. FR4 stripline used in backplanes. It consumed only 13.2 mA from a 2.5 V supply, and achieved a peak to peak jitter of 24 ps and a differential eye opening voltage amplitude of 120 mV.
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