Elsevier

Microelectronics Reliability

Volume 45, Issues 9–11, September–November 2005, Pages 1311-1316
Microelectronics Reliability

Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology

https://doi.org/10.1016/j.microrel.2005.07.012Get rights and content

Abstract

The distance between active region and the seal-ring location has been investigated in a 0.25-μm CMOS process. From the experimental results, this distance can be shrunk to only 5 μm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT).

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