Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects
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2007, Materials Science and Engineering R: ReportsCitation Excerpt :Conventionally, barrier layer covers the bottom and top surfaces of the Al-based metallization while it covers only the bottom and vertical side wall surfaces of Cu-based metallization. For the Al(Cu)/TiN interconnection system, an intentional vacuum break after the bottom barrier layer deposition and before the Al deposition should be preferred [30]. However, in the case of Cu-based metallization, air exposure of the wafers after barrier layer deposition and before Cu seed layer deposition degrades the EM performance [285].
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