Application of various optical techniques for ESD defect localization

doi:10.1016/j.microrel.2006.07.021

Microelectronics Reliability

Volume 46, Issues 9–11, September–November 2006, Pages 1563-1568

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Abstract

Various optical defect localization techniques are applied on the same integrated circuits (IC). These circuits were previously stressed by Electro Static Discharges (ESD) to create defects. The results obtained by each technique were analyzed to determine the nature of the defects. The different data are compared to assess their sensitivity and to evaluate the contribution of each technique in a failure analysis flow.

References (6)

Guitard N. et al. ESD Induced Latent Defects In CMOS ICs And Reliability Impact”, EOS/ESD Symposium Proceedings,...
Pouget V et al. Time-Resolved Scanning of Integrated Circuits with a Pulsed Laser: Application to Transient Fault...
Beauchêne T et al. Thermal Laser Stimulation and OBIC techniques applied to ESD defect location”. Microelectronics...

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