A comprehensive model for PMOS NBTI degradation: Recent progress

doi:10.1016/j.microrel.2006.10.012

Microelectronics Reliability

Volume 47, Issue 6, June 2007, Pages 853-862

https://doi.org/10.1016/j.microrel.2006.10.012 Get rights and content

Abstract

Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBTI degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction–Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism.

Section snippets

Background

Design of any digital circuit is based on the presumption that transistor parameters will remain bounded by a certain margin (typically ±15%) during the projected lifetime of the IC. This margin consists of initial manufacturing tolerance encapsulated in $C_{P}^{K}$ numbers as well as other time-dependent parameter shifts due to various transistor degradation mechanisms like hot carrier degradation (HCI), gate dielectric breakdown (TDDB), negative bias temperature instability (NBTI), etc. Among them,

The R–D model of NBTI degradation: definition of the puzzle

In the Reaction–Diffusion (R–D) formulation of NBTI degradation [1], [8], [22], one assumes that NBTI arises due to hole-assisted breaking of Si–H bonds at the Si/SiO₂ interface (see Fig. 2, top illustration). The rate of trap generation is given by, $\frac{d N_{IT}}{d t} = k_{F} (N_{0} - N_{IT}) - k_{R} N_{H} (0) N_{IT}$ where N₀ is the initial number of Si–H bond at the Si/SiO₂ interface. N_IT is the fraction of these Si–H bonds broken at time t due to NBTI stress. The dissociation rate constant k_F is proportional to the number of

The R–D model for NBTI degradation: Resolution of the puzzle

As mentioned in Section 1, post-2003 NBTI experiments are characterized by four additional features: saturation of degradation at long stress times, independence of NBTI degradation with frequency, dispersive vs. Arrhenius activation, and difficulty in distinguishing between dissociation kinetics of Si–O and Si–H bonds. Since all these features have significant implications for lifetime projection, they mandate a reconsideration of the R–D model [5], [20], [21], [30], [31].

The saturation

Conclusions and outlook

NBTI has been persistent reliability concern for Silicon ICs since mid 1960s. A large number of studies of various aspects of NBTI degradation have been reported in the literature. However, a close review of the literature shows that the pre-2003 view of NBTI degradation anticipates a time-exponent and temperature-activation that are not mutually consistent. The post-2003 studies demonstrating NBTI saturation and frequency independence, which although appeared to have complicated the picture,

Acknowledgement

We acknowledge contributions from Ahmed E. Islam. Financial support from National Science Foundation, Applied Materials and Renesas Technologies are gratefully acknowledged.

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View full text

A comprehensive model for PMOS NBTI degradation: Recent progress

Abstract

Section snippets

Background

The R–D model of NBTI degradation: definition of the puzzle

The R–D model for NBTI degradation: Resolution of the puzzle

Conclusions and outlook

Acknowledgement

Microelectron Reliab

Microelectron Eng

Microelectron Reliab

Microelectron Reliab

Microelectron Reliab

Microelectron Reliab

Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing

J Appl Phys

Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs

IEEE Trans Electron Dev

Evaluation of NBTI in HfO2 gate-dielectric stacks with tungsten gates

IEEE Electron Dev Lett

A critical examination of the mechanics of dynamic NBTI for pMOSFETs

IEDM Tech Dig

Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface

IEEE Electron Dev Lett

A comprehensive framework for predictive modeling of negative bias temperature instability

Proc IEEE Int Reliab Phys Symp

Influence of nitrogen in ultra-thin SiON on negative bias temperature instability

IEDM Tech Dig

Ultrathin (<4 nm) SiO2 Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing structure and physical and electrical limits

J Appl Phys

Impact of NBTI on the temporal performance degradation of digital circuits

IEEE Electron Dev Lett

Effect of pMOST bias temperature instability on circuit reliability performance

IEDM Tech Dig

Characteristics of surface-state charge (QSS) of thermally oxidized silicon

J Electrochem Soc

On the formation of surface states during stress aging of thermal Si–SiO2 interfaces

J Electrochem Soc

Universal recovery behavior of negative bias temperature instability

IEDM Tech Dig

Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field effect transistors

Appl Phys Lett

Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling

IEEE Electron Dev Lett

On the dispersive vs. Arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: measurement theory and implcations

IEDM Tech Dig

Evaluation of NBTI in HfO₂ gate-dielectric stacks with tungsten gates

Hole energy dependent interface trap generation in MOSFET Si/SiO₂ interface

Ultrathin (<4 nm) SiO₂ Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing structure and physical and electrical limits

Characteristics of surface-state charge (Q_SS) of thermally oxidized silicon

On the formation of surface states during stress aging of thermal Si–SiO₂ interfaces