Degradation kinetics of ultrathin HfO2 layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM
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Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf<inf>1-x</inf>Ta<inf>x</inf>O high-k film prepared by dual ion beam sputtering deposition
2013, VacuumCitation Excerpt :Prior to the XPS measurement, about 15 nm-thick top layer was etched by 1 keV Ar ion bombardment to remove surface contaminants and to investigate the interface chemistry due to the detecting depth of XPS less than 10 nm. The intensities for all the XPS spectra recorded here have been normalized for comparison and the adventitious hydrocarbon C 1s binding energy at 284.5 eV was used as reference to calibrate the energy shift of the Hf 4f, Ta 4f, O 1s and Si 2p shallow core levels [16–18]. The surface roughness of Hf1−xTaxO films were investigated by AFM (NT-MDT Solver P47-PRO).
The chemistry and thermal stability of HfTaO/Si interface by X-ray photoelectron spectroscopy
2012, Surface and Interface Analysis
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