Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors
Introduction
Microelectromechanical systems (MEMS) are increasingly entering the market as an enabling technology for more and more interesting applications in diverse fields such as next-generation communication, multimedia, consumer electronics, automotive and aviation, space and defence, healthcare and cognitive systems. In this context it is important that sufficient research work is carried out to study and characterize the reliability of MEMS components before they are integrated into commercial products [1]. Electrostatic discharge (ESD) as a cause of failure in MEMS has received increasing interest in recent times. ESD failure levels have been measured and reported in various MEMS devices [2], [3], [4]. Since MEMS are designed to operate in various environments, it is very useful to study the ESD failures in MEMS under those conditions. In the present paper, for the first time in literature, the ESD failure levels of MEMS micromirror devices have been measured in different ambient pressure conditions. This paper also investigates the effect of certain design parameters on the ESD sensitivity of MEMS micromirror devices. Based on previous results regarding the ESD failure levels in electrostatically actuated torsional micromirrors [4], new micromirror test structures with improved designs were processed and have been tested for ESD robustness. Human Body Model (HBM) ESD tests performed on these devices indicate an influence of parameters like the mechanical stiffness, the actuation electrode area and the ambient pressure conditions on the ESD failure levels. The results of these tests will be discussed in the following sections.
The MEMS devices used for the ESD tests together with all their design variations are described in the next section. The concept of the HBM ESD testing technique and the test conditions used for the MEMS are described in Section 3. Following that, the results of the ESD tests are described in Section 4. Section 5 presents some analysis of the results and inferences. This is then followed by the main conclusions of this work.
Section snippets
Device description
Micromirrors are used in many notable MEMS applications in real life. In most cases of existing commercial products, individual micromirrors are ganged together as arrays which can be actuated by CMOS drivers in a monolithic technology or CMOS–MEMS hybrid integration process. In such applications, the failure of even a single mirror in the array is considered a failure of the device. Moreover, earlier experiments in small sized micromirror arrays have shown them to have ESD failure levels
Testing and measurement techniques
To study the ESD sensitivity for micromirrors, HBM ESD testing was performed on devices using a wafer level ESD tester [5]. The Human Body Model (HBM) gives the most commonly used approximation of a real-life ESD event.
The simple RC model of the HBM tester with Chbm = 100 pF and Rhbm = 1500 Ω as shown in Fig. 3 simulates the practical scenario where a charged human (operator), on making contact with an ESD sensitive device, discharges all the charge in his body through the device to the ground[6].
Results of measurements
Micromirrors show high sensitivity to ESD zaps. The failure of the MEMS devices can be observed from the HBM voltage discharge waveform across the device. Functional devices have a long discharge with duration of a few milliseconds as has been shown in a previous work. Failure of the micromirror was recognized electrically as a fast discharge waveform with duration of a few microseconds, which indicates a low resistance path for current flow. This is shown in Fig. 4 for a failure at 50 V zap.
Analysis of results and inferences
The ESD failure level shows an improvement with increase in hinge widths in all the four cases, i.e., for both electrode areas and at both pressure conditions. This shows that there is a direct correlation between mechanical robustness and ESD sensitivity since mirrors with wider hinges, which are also mechanically stiffer, fail at a higher ESD zap level. However, at atmospheric pressure conditions, this trend is less pronounced and after a certain voltage level, increasing the hinge width does
Conclusions
HBM ESD tests on individual micromirror structures in various ambient pressure conditions has been performed and reported for the first time. This paper presents an empirical and statistical study of the various factors that can play a role in the ESD robustness of unprotected MEMS micromirrors. Improvement in the ESD robustness of existing micromirror MEMS devices is possible to a certain extent by tuning the design parameters such as the torsional hinge width and actuation electrode area.
Acknowledgments
The authors wish to thank Dr. Ann Witvrouw of imec who was in charge of the processing of the devices. The devices used for this paper were processed at imec for GEMINI, a Flemish “Innovatie door Wetenschap en Technologie” (IWT) SBO research project. The authors also thank Dr. Theo Smedes of NXP Semiconductors for mentoring this paper.
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