A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs
Introduction
As process technology scales to nanometers, the amount of defects in electronic circuits is expected to increase, becoming a major issue in current and future technologies. This is especially due to manufacturing-induced problems leading to a decrease in the yield [1], [2]. Indeed, the yield has become a fundamental criterion in defining an implementation’s cost, as important as area, speed and power consumption which intervene in the tradeoff that a designer has to make [3].
Thanks to their reconfigurability, low development costs and reduced time-to-market, SRAM-based FPGAs are widely used in several applications from networking to space applications [4], [5], [6]. Therefore, from the manufacturer viewpoint, incorporating defect tolerance is crucial to enhance the yield and relaxes the stringent constraints of the manufacturing process [7], [8], [9]. Many techniques have been proposed in the technical literature for repairing FPGAs when they are affected by permanent faults [10], [11], [12].
As a matter of fact, most of the current defect tolerance (hardening) schemes introduce redundancy in the architecture to combat defects. Several hardening techniques at different granularity levels have been proposed to better the FPGA’s robustness to defects [13], [14], [15]. Nevertheless, these techniques assume spare resources and/or consume too much area to be cost-effective.
This work aims at improving the robustness of the FPGA’s basic blocks (logic and interconnect), which are mainly composed of 2:1 multiplexers (Mux2s), by proposing a Mux2 design tolerant to single transistor defects of the types: stuck-open, stuck-closed and gate shorts. We used the STM 65 nm technology to create this Mux2, called Z-Mux, from Tristate cells of the CORE65LPSVT standard cell library. We compared the Z-Mux with the common Mux2 implemented with CMOS transmission gates, and with other Mux2 architectures. The proposed Z-Mux proved to be the most robust of all with respect to the aforementioned defects. Besides, it consumes less area than other hardening methods like the Triple Modular Redundancy (TMR) technique [16], [17], [18], the quadrupled transistor technique [19] and the Multiple Short-Open (MSO) technique [20]. In fact, the TMR being one of the most popular fault tolerance approaches, tolerates one defective module, assuming a perfect working voter. The proposed Z-Mux proved to be even more robust to transistor defects than the TMR technique applied on the common Mux2, using a simple fault-tolerant voter introduced in [21]. It was demonstrated that this voter is tolerant to single faults.
The remainder of this paper is organized as follows: Section 2 introduces the Z-Mux and the other studied Mux2 architectures. In Section 3, the defect tolerance analysis is explained. Then, simulation results are discussed in Section 4 and the Mux2 architectures are compared in terms of reliability and size. Finally, concluding remarks are drawn in Section 5.
Section snippets
The proposed Mux2 architecture and others
In order to propose a defect-tolerant Mux2, we proceeded in two different ways.
First way, we explored four Mux2 design alternatives by changing the internal assembling of transistors, using the STM 65 nm CMOS technology and CORE65LPSVT standard cell library. The transistor schematics of the three common Mux2 designs are represented in Fig. 1 (transmission gates, nand gates and full custom). In all transistor schematics, signals in0 and in1 are the Mux2 inputs, S0 is the selection entry and out
Defect tolerance analysis
Defect modeling: In this paper, we modeled single defects affecting the transistors. The most common defects are stuck-opens and stuck-shorts [19]. A stuck-open transistor is permanently OFF and is modeled by shorting the gate to the ground for the NMOS type, and to Vdd for the PMOS type. This is actually equivalent to removing the transistor from the netlist. A stuck-closed transistor is permanently ON and is modeled by shorting the drain and the source. Gate–drain and gate–source shorts were
Simulation results
Failure profiles for all simulated Mux2 designs were plotted. That of the Z-mux is shown in Fig. 4. The transistors on the X-axis are numbered the same way as in Fig. 2.
First of all, we notice that the shapes of the failure rate and the RMS error curves are in good agreement. Then, we can say in general that the most critical defect is the gate–drain short. When focusing on the core architecture, i.e. the Tristate cells only (transistors numbered from 7 to 26), we notice that the NMOS
Conclusion
In a context where manufacturing defects are becoming an issue in nanoscale technology, we were concerned about the FPGA’s decreasing yield. Therefore, we focused on the FPGA’s basic element: the multiplexer. Using the STM 65 nm technology, we explored different Mux2 architectures and tested their robustness to single transistor defects. The proposed Z-Mux, mainly made up of 2 Tristate cells, emerged as the most resilient design to such defects. Moreover, it consumes less area than the commonly
Acknowledgments
This work is co-funded by the CATRENE Project RELY and the Project Robust FPGA ANR 11 INS 02, supported by the French National Research Agency.
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