Compact, very low voltage, temperature-independent reference circuit

P.S. Crovetti; F. Fiori

Compact, very low voltage, temperature-independent reference circuit

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Compact, very low voltage, temperature-independent reference circuit

Author(s): P.S. Crovetti and F. Fiori
DOI: 10.1049/iet-cds:20050373

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Author(s): P.S. Crovetti ¹ and F. Fiori ¹
- Affiliations: 1: Dipartimento di Elettronica, Politecnico di Torino, Italy
Source: Volume 1, Issue 1, February 2007, p. 63 – 71
DOI: 10.1049/iet-cds:20050373 , Print ISSN 1751-858X, Online ISSN 1751-8598

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A compact, very low voltage, temperature-independent reference circuit, which is based on the thermal properties of bipolar junction transistors in the saturation region is presented. The new circuit operates from a minimum power supply of less than 1V and provides a reference voltage with a nominal thermal drift of ∼30 ppm/°C in the temperature range between −40 and 110°C. The proposed circuit has been integrated on silicon by a 0.35 µm CMOS technology and a reference voltage with a measured untrimmed thermal drift of ∼100 ppm/°C has been reported. The new voltage reference occupies a silicon area of only 3,500 µm², shows a power consumption of <30 µW and its DC power supply rejection is better than 65 dB.

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Compact, very low voltage, temperature-independent reference circuit

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