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Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors

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With the continuing scaling of metal–oxide–semiconductor (MOS) devices, the hot-carrier (HC)-induced device degradation has become a major reliabiliy concern in sub- and deep-submicrometre MOS field-effect transistors (MOSFETs) and lateral double-diffused MOSFETs (LDMOSFETs). It is believed that the degradation is mainly due to the effects of the generated oxide-trapped charges and interface traps at the Si/SiO2 interface. In general, the large electric field is strongly localised in a well-defined region; therefore carrier injection and interface-trap creation are similarly concentrated. The strongly inharmonious characters of HC injection and resulting damage present a considerable challenge to both experimental and modelling efforts.The HC degradation behaviour of an n-channel LDMOS transistor is investigated under various stress conditions. By applying variable base charge pumping experiments, a consistent picture of the degradation mechanism can be depicted. HC-induced interface traps are generated in the channel region of the device, in the drift region below the thick field oxide and at the bird's beak edge. The latter is shown to dominate the degradation of Idlin, which is the most critical parameter concerning HC lifetime in this specific device.

Inspec keywords: silicon compounds; hot carriers; semiconductor device reliability; silicon; MOSFET

Other keywords: metal-oxide-semiconductor device; hot-carrier reliability; high-voltage lateral double-diffused MOS transistor; generated oxide-trapped charge effect; n-channel LDMOS transistor; Si-SiO2; HC injection inharmonious character

Subjects: Reliability; Insulated gate field effect transistors

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