Single crystal diamond M–i–P diodes for power electronics
Single crystal diamond M–i–P diodes for power electronics
- Author(s): M. Brezeanu ; T. Butler ; N. Rupesinghe ; S.J. Rashid ; M. Avram ; G.A.J. Amaratunga ; F. Udrea ; M. Dixon ; D. Twitchen ; A. Garraway ; D. Chamund ; P. Taylor
- DOI: 10.1049/iet-cds:20060379
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- Author(s): M. Brezeanu 1 ; T. Butler 1 ; N. Rupesinghe 1 ; S.J. Rashid 1 ; M. Avram 2 ; G.A.J. Amaratunga 1 ; F. Udrea 1 ; M. Dixon 3 ; D. Twitchen 3 ; A. Garraway 4 ; D. Chamund 4 ; P. Taylor 4
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View affiliations
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Affiliations:
1: Department of Engineering, University of Cambridge, Cambridge, UK
2: Department of Engineering, National Institute for R&D in Microtechnology (IMT-Bucharest), Bucharest, Romania
3: Department of Engineering, Element Six Ltd., Ascot, UK
4: Department of Engineering, Dynex Semiconductors Ltd., UK
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Affiliations:
1: Department of Engineering, University of Cambridge, Cambridge, UK
- Source:
Volume 1, Issue 5,
October 2007,
p.
380 – 386
DOI: 10.1049/iet-cds:20060379 , Print ISSN 1751-858X, Online ISSN 1751-8598
© The Institution of Engineering and Technology
Published
Its outstanding electronic properties and the recent advances in growing single-crystal chemically vapour-deposited substrates have made diamond a candidate for high-power applications. Diamond Schottky diodes have the potential of being an alternative to silicon p–i–n and SiC Schottky diodes in power electronic circuits. Extensive experimental and theoretical results, for both on- and off-state behaviour of metal–insulator–p-type diamond Schottky structures, are presented here. The temperature dependence of the forward characteristics and electrical performance of a termination structure suitable for unipolar diamond devices are also presented.
Inspec keywords: chemical vapour deposition; Schottky diodes; silicon compounds; p-i-n diodes; wide band gap semiconductors
Other keywords:
Subjects: Junction and barrier diodes
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