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Modelling of power metal-oxide semiconductor field-effect transistor for the analysis of switching characteristics in half-bridge converters

Modelling of power metal-oxide semiconductor field-effect transistor for the analysis of switching characteristics in half-bridge converters

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Published

Considering the power metal-oxide semiconductor field-effect transistor (MOSFET) parasitic elements, the switching characteristics of half-bridge converters are analysed. First, the switching operation process of the converter is discussed, including Cdv/dt induced voltage, turn-on and turn-off transient and drain–source voltage oscillations. Then an analytical model of power MOSFET is deduced and validated. Based on the model and Saber software, the switching characteristics of half-bridge converters are simulated with different values of parasitic elements. Finally, according to the simulation results, the design optimisations are presented, and an experimental prototype is used to validate the proposed approach.

Inspec keywords: MOSFET; power transistors; semiconductor device models; switching convertors

Other keywords: power metal-oxide semiconductor field-effect transistor; turn-off transient; turn-on transient; half-bridge converter; drain-source voltage oscillation; switching characteristic; MOSFET parasitic element; Saber software; Cdv/dt induced voltage

Subjects: Power semiconductor devices; Insulated gate field effect transistors; Power convertors and power supplies to apparatus; Semiconductor device modelling, equivalent circuits, design and testing

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