Nonlinear Analysis of a Double Avalanche Region IMPATT Diode

Alexander M. ZEMLIAK
Carlos CELAYA-BORGES
Roque De La CRUZ

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.1    pp.119-124
Publication Date: 2005/01/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.1.119
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
semiconductor microwave devices,  modelling and simulation,  numerical methods,  

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Summary: 
The comparative analysis of the well known Double Drift Region (DDR) IMPATT diode structure and the n+pvnp+ structure for the avalanche diode has been realized on the basis of the drift-diffusion nonlinear model. The last type of the diode was named as Double Avalanche Region (DAR) IMPATT diode. This structure includes two avalanche regions inside the diode. The phase delay which was produced by means of the two avalanche zones and the drift zone v is sufficient for the negative resistance obtained for the wide frequency region. The numerical model that is used for the analysis of the various diode structures includes all principal features of the physical phenomena inside the semiconductor structure. The admittance characteristics of both types of the diodes were analyzed in very wide frequency region.