IEICE Trans - High-Luminance EL Devices Using Zn<SUB>2</SUB>Si<SUB>1-<I>X</I></SUB>Ge<SUB><I>X</I></SUB>O<SUB>4</SUB>:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets

High-Luminance EL Devices Using Zn₂Si_1-XGe_XO₄:Mn Thin Films Prepared by Combinatorial Deposition by r.f. Magnetron Sputtering with Subdivided Powder Targets

Toshihiro MIYATA
Yu MOCHIZUKI
Tadatsugu MINAMI

Publication
IEICE TRANSACTIONS on Electronics Vol.E88-C No.11 pp.2065-2069
Publication Date: 2005/11/01
Online ISSN:
DOI: 10.1093/ietele/e88-c.11.2065
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Electronic Displays)
Category:
Keyword:
combinatorial deposition, subdivided powder targets, magnetron sputtering, phosphor, thin-film, electroluminescence,

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Summary:
A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn₂Si_1-XGe_XO₄:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m² were obtained in Zn₂Si_0.6Ge_0.4O₄:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.