IEICE Trans - Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect

Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect

Che-ming WANG
Kuang-Po HSUEH
Yue-ming HSIN

Publication
IEICE TRANSACTIONS on Electronics Vol.E88-C No.8 pp.1790-1792
Publication Date: 2005/08/01
Online ISSN:
DOI: 10.1093/ietele/e88-c.8.1790
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
Keyword:
HBT, Kirk effect, collector doping,

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Summary:
A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before onset of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.