Summary
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A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors Ryoichi ISHIHARA Arie GLAZER Yoel RAAB Peter RUSIAN Mannie DORFAN Benzi LAVI Ilya LEIZERSON Albert KISHINEVSKY Yvonne van ANDEL Xin CAO Wim METSELAAR Kees BEENAKKER Sara STOLYAROVA Yael NEMIROVSKY Publication IEICE TRANSACTIONS on Electronics Vol.E89-C No.10 pp.1377-1382 Publication Date: 2006/10/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e89-c.10.1377 Print ISSN: 0916-8516 Type of Manuscript: Special Section INVITED PAPER (Special Section on Electronic Displays) Category: Keyword: polycrystalline-Si, thin-film transistors, gas immersed laser doping, solid-state laser, Full Text: PDF(1.2MB)>>
Summary: CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively. | |||||
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