Summary
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A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput Hideaki KURATA Shunichi SAEKI Takashi KOBAYASHI Yoshitaka SASAGO Tsuyoshi ARIGANE Keiichi YOSHIDA Yoshinori TAKASE Takayuki YOSHITAKE Osamu TSUCHIYA Yoshinori IKEDA Shunichi NARUMI Michitaro KANAMITSU Kazuto IZAWA Kazunori FURUSAWA Publication IEICE TRANSACTIONS on Electronics Vol.E89-C No.10 pp.1469-1479 Publication Date: 2006/10/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e89-c.10.1469 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: flash memory, AG-AND, multilevel, high speed programming, CCIP, Full Text: PDF(2.1MB)>>
Summary: A 1-Gb AG-AND flash memory has been fabricated using 0.13-µm CMOS technology, resulting in a cell area of 0.104 µm2 and a chip area of 95.2 mm2. By applying constant-charge-injection programming and source-line-select programming, a fast page programming time of 600 µs is achieved. The four-bank operation attains a fast programming throughput of 10 MB/s in multilevel flash memories. The compact SRAM write buffers reduce the chip area penalty. A rewrite throughput of 8.3 MB/s is achieved by means of the RAM-write operation during the erase mode. | |||||
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