|
For Full-Text PDF, please login, if you are a member of IEICE,
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
|
High Efficiency Open Collector Adaptive Bias SiGe HBT Differential Power Amplifier
Kuei-Cheng LIN Tsung-Yu YANG Kuan-Yu CHEN Hwann-Kaeo CHIOU
Publication
IEICE TRANSACTIONS on Electronics
Vol.E89-C
No.11
pp.1704-1707 Publication Date: 2006/11/01 Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.11.1704 Print ISSN: 0916-8516 Type of Manuscript: LETTER Category: Microwaves, Millimeter-Waves Keyword: open collector linearizer, SiGe HBT, adaptive bias amplifier, W-CDMA,
Full Text: PDF(655KB)>>
Summary:
A high efficiency SiGe HBT differential power amplifier with an open collector adaptive bias was successfully demonstrated. A novel linearizer consists of an open collector heterojunction bipolar transistor bias circuit and an MOS feedback diode was proposed, which achieved better power added efficiency (PAE) than that of traditional adaptive bias circuits. The size effect of linearizer was investigated and the impedance ratio (R1/R2) between the linearizer and the main amplifier was optimized by the factor of 3. The measured differential power amplifier achieved an output 1-dB compression point (P1 dB) of 18.7 dBm with PAE of 31.2%, the output second order intermodulation point (OIP2) of 59 dBm, and third-order intermodulation point (OIP3) of 28 dBm. Compared to traditional adaptive bias technique, the proposed linearizer power amplifier effectively improved the PAE. The fabricated die size including pads is less than 0.925 mm2 and suitable for highly integrated linear drive amplifier.
|
|
|