IEICE Trans - RF Passive Components Using Metal Line on Si CMOS

RF Passive Components Using Metal Line on Si CMOS

Kazuya MASU
Kenichi OKADA
Hiroyuki ITO

Publication
IEICE TRANSACTIONS on Electronics Vol.E89-C No.6 pp.681-691
Publication Date: 2006/06/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.6.681
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Analog Circuit and Device Technologies)
Category:
Keyword:
Si CMOS, on-chip passive, interconnect, transmission line, inductor, variable inductor, reconfigurable RF circuit,

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Summary:
This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.