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Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes
Masahiro ASADA Naoyuki ORIHASHI Safumi SUZUKI
Publication
IEICE TRANSACTIONS on Electronics
Vol.E89-C
No.7
pp.965-971 Publication Date: 2006/07/01 Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.965 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: resonant tunneling diode, terahertz and sub-terahertz oscillation, slot antenna, voltage-controlled oscillation, transit time,
Full Text: PDF(793KB)>>
Summary:
Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.
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