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Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors Yahya Moubarak MEZIANI Jerzy  USAKOWSKINina DYAKONOVA Wojciech KNAP Dalius SELIUTA Edmundas SIRMULIS Jan DEVENSON Gintaras VALUSIS Frederic BOEUF Thomas SKOTNICKI Publication IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.993-998 Publication Date: 2006/07/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e89-c.7.993 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: CMOS, plasma oscillations, plasma instability, terahertz radiation, magnetoresistance mobility, Full Text: PDF(520.3KB)>>
Summary: Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30 nm gate length transistor was illuminated by THz radiation at room temperature. We observe a maximum signal near to the threshold voltage. This result clearly demonstrates the possibility of plasma wave THz operation of these nanometer scale devices. The response was attributed to a non resonant detection. We also demonstrate the possibility to observe a resonant detection on the same devices. | |||||
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