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High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations Akio WAKEJIMA Kohji MATSUNAGA Yuji ANDO Tatsuo NAKAYAMA Yasuhiro OKAMOTO Kazuki OTA Naotaka KURODA Masahiro TANOMURA Hironobu MIYAMOTO Publication IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.929-936 Publication Date: 2007/05/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e90-c.5.929 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: GaN-FET, amplifier, memory effects, baseband impedance, digital predistortion, W-CDMA, Full Text: PDF(688.2KB)>>
Summary: This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM3 and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W. | |||||
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