Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices

Seongjae CHO
Jang-Gn YUN
Il Han PARK
Jung Hoon LEE
Jong Pil KIM
Jong-Duk LEE
Hyungcheol SHIN
Byung-Gook PARK

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.5    pp.988-993
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.988
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
3-D devices,  vertical ion implantation,  doping profile,  concentration peak,  doping gradient,  

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Summary: 
One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.