IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
An Ultra-Low-Voltage Ultra-Low-Power Weak Inversion Composite MOS Transistor: Concept and Applications
Luis H. C. FERREIRATales C. PIMENTARobson L. MORENO
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2008 Volume E91.C Issue 4 Pages 662-665

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Abstract

This work presents an ultra-low-voltage ultra-low-power weak inversion composite MOS transistor. The steady state power consumption and the linear swing signal of the composite transistor are comparable to a single transistor, whereas presenting very high output impedance. This work also presents two interesting applications for the composite transistor; a 1:1 current mirror and an extremely low power temperature sensor, a thermistor. Both implementations are verified in a standard 0.35-μm TSMC CMOS process. The current mirror presents high output impedance, comparable to the cascode configuration, which is highly desirable to improve gain and PSRR of amplifiers circuits, and mirroring relation in current mirrors.

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© 2008 The Institute of Electronics, Information and Communication Engineers
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