Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro ANDO; Koji UEDA; Mamoru KUMANO; Taizoh SADOH; Kazumasa NARUMI; Yoshihito MAEDA; Masanobu MIYAO

doi:10.1093/ietele/e91-c.5.708

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro ANDO, Koji UEDA, Mamoru KUMANO, Taizoh SADOH, Kazumasa NARUMI, Yoshihito MAEDA, Masanobu MIYAO

Author information

Keywords: ferromagnetic silicide, Fe₃Si, Ge, molecular beam epitaxy

JOURNAL RESTRICTED ACCESS

2008 Volume E91.C Issue 5 Pages 708-711

DOI https://doi.org/10.1093/ietele/e91-c.5.708

Details

Abstract

Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe₃Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometric condition. From TEM observation, it was rvealed that the Fe₃Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe₃Si/Ge structures was guaranteed up to 400°C. These results suggested that growth at a low temperature (<200°C) under the stoichiometric condition was essential to obtain high quality Fe₃Si/Ge structures with sharp interfaces.

Corresponding author

Register with J-STAGE for free!