Current Status and Future Prospects of SiC Power JFETs and ICs

Jian H. ZHAO; Kuang SHENG; Yongxi ZHANG; Ming SU

doi:10.1093/ietele/e91-c.7.1031

Special Section on Heterostructure Microelectronics with TWHM 2007

Current Status and Future Prospects of SiC Power JFETs and ICs

Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU

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Keywords: silicon carbide (SiC), junction field-effect transistor (JFET), power integrated circuits, normally off, high temperature electronics

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2008 Volume E91.C Issue 7 Pages 1031-1041

DOI https://doi.org/10.1093/ietele/e91-c.7.1031

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Abstract

This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35MHz will be discussed.

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