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On-Chip Thermal Gradient Analysis Considering Interdependence between Leakage Power and Temperature Takashi SATO Junji ICHIMIYA Nobuto ONO Masanori HASHIMOTO Publication IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E89-A No.12 pp.3491-3499 Publication Date: 2006/12/01 Online ISSN: 1745-1337 DOI: 10.1093/ietfec/e89-a.12.3491 Print ISSN: 0916-8508 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Simulation and Verification Keyword: thermal gradient simulation, leakage power, temperature-dependent leakage power, power calculation, leakage model, Full Text: PDF(1MB)>>
Summary: In this paper, we propose a methodology for calculating on-chip temperature gradient and leakage power distributions. It considers the interdependence between leakage power and local temperature using a general circuit simulator as a differential equation solver. The proposed methodology can be utilized in the early stages of the design cycle as well as in the final verification phase. Simulation results proved that consideration of the temperature dependence of the leakage power is critically important for achieving reliable physical designs since the conventional temperature analysis that ignores the interdependence underestimates leakage power considerably and may overlook potential thermal runaway. | ||||||||||
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