Summary
|
For Full-Text PDF, please login, if you are a member of IEICE, or go to Pay Per View on menu list, if you are a nonmember of IEICE. |
|
1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation Shizunori MATSUMOTO Hiroaki UENO Satoshi HOSOKAWA Toshihiko KITAMURA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA Publication IEICE TRANSACTIONS on Electronics Vol.E88-C No.2 pp.247-254 Publication Date: 2005/02/01 Online ISSN: DOI: 10.1093/ietele/e88-c.2.247 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: 100 nm-MOSFET, 1/f noise, measurement, modeling, Full Text: PDF(438.8KB)>>
Summary: A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions. | |||||
|
