A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission

Toshihiro MATSUDA
Hiroaki TAKEUCHI
Akira MURAMATSU
Hideyuki IWATA
Takashi OHZONE
Kyoji YAMASHITA
Norio KOIKE
Ken-ichiro TATSUUMA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.5    pp.811-816
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.811
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFET,  photoemission,  hot carrier,  gate length,  

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Summary: 
A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 2010 (=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array. An estimation method of the gate length fluctuation has been demonstrated with the photoemission intensity distribution analysis.