Transmission over 80 km at 10 Gb/s Using the Amplifier- and Modulator-Integrated Laser Diode

In KIM
Byung-Kwon KANG
Yu-Dong BAE
Byeonghoon PARK
Sang-Moon LEE
Young Hyun KIM
Dong-Hoon JANG

Publication
IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.5    pp.984-989
Publication Date: 2005/05/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.5.984
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
Keyword: 
monolithic integrated circuits,  semiconductor optical amplifiers,  electroabsorption,  distributed feedback lasers,  photodetectors,  attenuators,  

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Summary: 
We demonstrated the transmission over 80 km at 10 Gb/s by using the amplifier and electroabsorption-modulator integrated laser diode. Tilt-facet antireflection window is implemented, inside of which a monitor photodiode is monolithically integrated for accurate power regulation. To better control the amplifier-input power and to reduce the feedback of the amplified spontaneous emission, an attenuator is incorporated by means of the inner-window. By amplifying the modulated signal and compensating modulator-chirp by gain-saturation in the amplifier, high power optical transmission is achieved from a device with -10 dB attenuation at total laser and amplifier currents of 200 mA.