Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor

Seok Gyu CHOI
Jung Hun OH
Bok Hyung LEE
Byeong Ok LIM
Sung Woon MOON
Dong Hoon SHIN
Sam Dong KIM
Jin Koo RHEE

Publication
IEICE TRANSACTIONS on Electronics   Vol.E89-C    No.5    pp.616-621
Publication Date: 2006/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.5.616
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
MHEMT,  InP-composite channel,  impact ionization coefficient,  output conductance,  

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Summary: 
To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility-transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the InAlAs/InGaAs/InP structure. Compared with the conventional MHEMT, the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz, and a cutoff frequency (fT) and a maximum frequency of oscillation (fmax) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.