Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs

Hiroyuki SHINOJIMA
Ryuzi YANO

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.1    pp.46-50
Publication Date: 2007/01/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.1.46
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microoptomechatronics)
Category: Micro/Nano Fabrication
Keyword: 
As ion implantation,  GaAs,  defect,  annealing,  VGa vacancy assisted diffusion,  pseudoactivation energy,  

Full Text: PDF(187.8KB)>>
Buy this Article


Summary: 
We determine the annealing dynamics of AsGa antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy EPA, which is different from true activation energy. The annealing time dependence of EPA obtained by the two diffusion models (self diffusion of AsGa antisite defects and VGa vacancy assisted diffusion of AsGa antisite defects) are compared with EPA's obtained from already published works. The results prove that the diffusion of AsGa antisite defects is assisted by the VGa vacancy defects that exist in a high density.