Improved Design of Thermal-Via Structures and Circuit Parameters for Advanced Collector-Up HBTs as Miniature High-Power Amplifiers

Hsien-Cheng TSENG
Pei-Hsuan LEE
Jung-Hua CHOU

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.2    pp.539-542
Publication Date: 2007/02/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.2.539
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Microwaves, Millimeter-Waves
Keyword: 
collector-up heterojunction bipolar transistors (C-up HBTs),  genetic algorithm (GA),  high-power amplifiers (HPAs),  thermal via,  

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Summary: 
An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.