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Design and Fabrication of 40 Gbps-NRZ SOA-MZI All-Optical Wavelength Converters with Submicron-Width Bulk InGaAsP Active Waveguides Yasunori MIYAZAKI Kazuhisa TAKAGI Keisuke MATSUMOTO Toshiharu MIYAHARA Tatsuo HATTA Satoshi NISHIKAWA Toshitaka AOYAGI Kuniaki MOTOSHIMA Publication IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.1118-1123 Publication Date: 2007/05/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e90-c.5.1118 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices) Category: Semiconductor Devices Keyword: wavelength converter, semiconductor optical amplifier, Mach-Zehnder interferometer, laser diode, 40 Gbps, Full Text: PDF(1.1MB)>>
Summary: The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved. | |||||
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