A design methodology optimizing constant-charge-injection programming (CCIP) for assist-gate (AG)-AND flash memories is proposed. Transient circuit simulations using an array-level model including lucky electron model (LEM) current source describing hot electron physics enables a concept design over the whole memory-string in advance of wafer manufacturing. The dynamic programming behaviors of various CCIP sequences, obtained by circuit simulations using the model is verified with the measurement results of 90-nm AG-AND flash memory, and we confirmed that the simulation results sufficiently agree with the measurement, considering the simulation results give optimum bias AG voltage approximately within 0.2V error. Then, we have applied the model to a conceptual design and have obtained optimum bit line capacitance value and CCIP sequence those are the most important issues involved in high-throughput programming for an AG-AND array.