IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
A-Ram CHOISang-Sik CHOIByung-Guan PARKDongwoo SUHGyungock KIMJin-Tae KIMJin-Soo CHOIDeok-Ho CHOTae-Hyun HANKyu-Hwan SHIM
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Keywords: SiGe, SEG, aspect ratio, RPCVD
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2008 Volume E91.C Issue 5 Pages 767-771

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Abstract

This paper presents the selective epitaxial growth (SEG) properties of reduced pressure chemical vapor deposition (RPCVD) at low temperatures (LT) of 675-725°C with high aspect ratio mask of dielectric films. The SEG process could be explained in conjunction with the loading effect, the mask pattern shape/size, and the process parameters of RPCVD. The growth rates showed a large non-uniformity up to 40% depending upon the pattern size of the dielectric mask films, but as the SEG film becomes thicker, the growth rate difference converged on -15% between the narrow 2-μm and the wide 100-μm patterns. The evolution of SEG was controlled dominantly by the surface migration control at the initial stage, and converted to the surface topology control. The design of pattern size and distribution with dummy patterns must be useful to accomplish the reliable and uniform LT-SEG.

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© 2008 The Institute of Electronics, Information and Communication Engineers
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