Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide

Shun SUGIURA; Shigeru KISHIMOTO; Takashi MIZUTANI; Masayuki KURODA; Tetsuzo UEDA; Tsuyoshi TANAKA

doi:10.1093/ietele/e91-c.7.1001

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Special Section on Heterostructure Microelectronics with TWHM 2007

Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide

Shun SUGIURA, Shigeru KISHIMOTO, Takashi MIZUTANI, Masayuki KURODA, Tetsuzo UEDA, Tsuyoshi TANAKA

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Keywords: enhancement, GaN, MOSFETs, HfO₂

JOURNAL RESTRICTED ACCESS

2008 Volume E91.C Issue 7 Pages 1001-1003

DOI https://doi.org/10.1093/ietele/e91-c.7.1001

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Abstract

We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO₂ as a gate insulator. The maximum transconductance of 23mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO₂ gate oxide has been obtained.

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