2008 Volume E91.C Issue 8 Pages 1331-1337
A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.