The low temperature permanent wafer bonding is studied on the plasma enhanced chemical vapour deposited dielectrics. Three types of dielectric material (SiOx, SiOxNy, SiCxNy) were prepared by the conventional CMOS interconnection process which includes the thermal annealing and chemical mechanical polishing step. The plasma treatment generated by different inert gas was evaluated to activate the dielectric surface prior to wafer bonding. The modified surface properties were characterized by using water wettability, hydrophilicity as well as the surface roughness. The obtained surface properties have been discussed with the interface bonding energy.