A 4-ns BiCMOS translation-lookaside buffer | IEEE Journals & Magazine | IEEE Xplore

A 4-ns BiCMOS translation-lookaside buffer


Abstract:

A 64-entry fully associative TLB (translation-lookaside buffer) with a pin-to-pin translation delay of 3.6 ns is described. This translation speed is achieved by using Bi...Show More

Abstract:

A 64-entry fully associative TLB (translation-lookaside buffer) with a pin-to-pin translation delay of 3.6 ns is described. This translation speed is achieved by using BiCMOS content-addressable memory (CAM) and SRAM arrays wherein small signal swings are maintained throughout the critical translation path. A BiCMOS CAM cell that uses a single bipolar translator to drive the match line is introduced. The TLB has been integrated as a stand-alone chip in an 0.8- mu m BiCMOS technology. The circuit operates from a 5.2-V supply with ECL-compatible input and output levels. The power dissipation (excluding the power dissipated in the physical address output buffers) is less than 600 mW.<>
Published in: IEEE Journal of Solid-State Circuits ( Volume: 25, Issue: 5, October 1990)
Page(s): 1093 - 1101
Date of Publication: 31 October 1990

ISSN Information:


Contact IEEE to Subscribe

References

References is not available for this document.