Abstract:
This paper introduces a new characterization method of measurement for the permittivity of dielectric material in thin films deposited on metallic/semiconductor substrate...Show MoreMetadata
Abstract:
This paper introduces a new characterization method of measurement for the permittivity of dielectric material in thin films deposited on metallic/semiconductor substrate. The method uses the conformal mapping technique to extract the relative permittivity and loss tangent is a non-destructive way. After measuring the S-parameters of the material when placed on a coplanar transmission line, an inverse problem is applied to extract the dielectric constant. The permittivity measurement is done for thin film of 5 micrometer thickness. The obtained results are satisfying and encouraging and the method is validated using standard FEM simulation software.
Published in: 2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA)
Date of Conference: 13-15 July 2016
Date Added to IEEE Xplore: 05 September 2016
ISBN Information: